The GaNonCMOS project was launched on 1st January 2017 with a duration of 4 years. The GaNonCMOS project aims to bring GaN power electronic materials, devices and systems to the next level of maturity by providing the most densely integrated materials to date. This development will drive a new generation of densely integrated power electronics and pave the way towards low cost, highly reliable systems for energy intensive applications.
This will be realized by integrating GaN power switches with CMOS drivers densely together using different integration schemes from the package level up to the chip level including wafer bonding between GaN on Si(111) and CMOS on Si (100) wafers.
The GaNonCMOS consortium is composed of 11 recognised key actors on the topics of materials, processing, components and systems for power electronics. GaNonCMOS is coordinated by Prof. Jean-Pierre Locquet from the Katholieke Universiteit Leuven (KUL).
During the kick-off meeting, the partners discussed the technical content, tasks to be accomplished during the next six months and administrative and financial issues.
This will be realized by integrating GaN power switches with CMOS drivers densely together using different integration schemes from the package level up to the chip level including wafer bonding between GaN on Si(111) and CMOS on Si (100) wafers.
The GaNonCMOS consortium is composed of 11 recognised key actors on the topics of materials, processing, components and systems for power electronics. GaNonCMOS is coordinated by Prof. Jean-Pierre Locquet from the Katholieke Universiteit Leuven (KUL).
During the kick-off meeting, the partners discussed the technical content, tasks to be accomplished during the next six months and administrative and financial issues.
